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  Datasheet File OCR Text:
 RBV5000 - RBV5010
PRV : 50 - 1000 Volts Io : 50 Amperes
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation
SILICON BRIDGE RECTIFIERS
RBV25
C3 30 0.3 3.9 0.2 4.9 0.2 3.2 0.1 20 0.3
+
13.5 0.3
~~
11 0.2
1.0 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
7.5 7.5 0.2 0.2 0.2 10 2.0 0.2 0.7 0.1
Dimensions in millimeters
Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 C Ta = 100 C
SYMBOL
VRRM VRMS VDC IF(AV)
RBV 5000 50 35 50
RBV 5001 100 70 100
RBV 5002 200 140 200
RBV 5004 400 280 400 50
RBV 5006 600 420 600
RBV 5008 800 560 800
17.5 0.5
RBV 5010 1000 700 1000
UNIT Volts Volts Volts Amps.
IFSM It VF IR IR(H) R JC TJ TSTG
2
400 660 1.1 10 200 1.5 10 - 40 to + 150
Amps. A2S Volts A A C/W C C
Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case w ith units mounted on heatsink.
UPDATE : AUGUST 3, 1998
RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 )
AVERAGE FORWARD OUTPUT CURRENT AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
60
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
600
50
500
40
400
TJ = 50 C
30
300
20
200
10 P.C. Board Mounted with SINE WAVE R-Load 0 0 25 50 75 100 125 150 175
100
8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
0 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10
FORWARD CURRENT, AMPERES
REVERSE CURRENT, MICROAMPERES
TJ = 100 C
10 Pulse Width = 300 s 1 % Duty Cycle 1.0
1.0
0.1
TJ = 25 C
TJ = 25 C
0.1 0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS


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